Oxygen vacancy in monoclinic HfO2: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments
By Peter Broqvist, Alfredo Pasquarello. 2006
220 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/067e6203c264f587faacc7dc728a3720428e34ae
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- D. Walczyk
- Thomas Schroeder
- T. Bertaud
- M. Sowinska
- M. Lukosius
- M. Fraschke
- D. Wolansky
- Bernd Tillack
Citations in the corpus
- Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices (2011, background): “in the fourfold-coordinated oxygen sites in monoclinic HfO2 are suggested as a possible candidate for the defect level [47], [48].”