Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy

By E. Calleja, M. Sánchez-García, F. Sanchez, F. Calle, F. Naranjo, E. Muñoz, U. Jahn, K. Ploog. 2000

344 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0588c01951d87daba45d88298be5eb033e6b0bf0

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In Materials Chemistry

1. Stephan Reitzenstein

Citations in the corpus

• MicroLED technologies and applications: characteristics, fabrication, progress, and challenges (2020, unknown): “InGaN/GaN nano-structure LEDs are fully or partially strained due to their size, resulting in a low dislocation density [71–73].”
• Direct comparison of catalyst-free and catalyst-induced GaN nanowires (2010, background): “Emission in this energy range has been assigned in the bulk to structural defects, particularly SFs [39–41], and in catalyst-free NWs to structural defects at the NW–substrate interface [42].”
• Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices (2002, unknown): “GaN band-edge emission at 369 nm increases with Ga flux and has a maximum in the Ga-rich growth regime; the PL intensity of visible and IR emission from Er ions (normalized by the incorporated Er concentration) increases with Ga flux and then drops abruptly to the detection limit near the stoichiome”