Field-effect transistors on tetracene single crystals
By R. D. Boer, T. Klapwijk, A. Morpurgo. 2003
251 citations recorded by the source corpus.
We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of 0.4?cm2/V?s. The nonmonotonous temperature dependence of the mobility, its weak gate voltage dependence, as well as the sharpness of the subthreshold slope, confirm the high quality of single-crystal devices. This is due to the fabrication process that does not substantially affect the crystal quality.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/03ee8dbb44b60ba6e8a3f6404bad3a4e9f084b31
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- Michele Muccini
- C. Daniel Frisbie
- J. Mannhart
- M. Di Ventra
- Maria Antonietta Loi
- Andy Thomas
- Mohammed Affan Zidan
- Khaled Nabil Salama
In Materials Chemistry
- Michele Muccini
- A. Morpurgo
- J. Mannhart
- M. Di Ventra
- A. Bhattacharya
- A. Millis
- J. Triscone
- Maria Antonietta Loi
Citations in the corpus
- Supramolecular organization in ultra-thin films of α-sexithiophene on silicon dioxide (2004, background): “Improvements in the charge-transport properties are observed when the supramolecular order is maximized, like in single crystals or in well-ordered thin film”
- Electrostatic modification of novel materials (2006, methodology): “The first approach is based on electrostatic bonding the surface of an organic film or crystal to a source-drain-gate structure that is prefabricated on a separate substrate de Boer et al., 2003; Takeya et al., 2003; Sundar et al., 2004 .”