Atmospheric oxygen binding and hole doping in deformed graphene on a SiO₂ substrate.

By S. Ryu, Li Liu, S. Berciaud, Young‐Jun Yu, Haitao Liu, Philip Kim, G. Flynn, L. Brus. Nano letters (Print), 2010

753 citations recorded by the source corpus.

Using micro-Raman spectroscopy and scanning tunneling microscopy, we study the relationship between structural distortion and electrical hole doping of graphene on a silicon dioxide substrate. The observed upshift of the Raman G band represents charge doping and not compressive strain. Two independent factors control the doping: (1) the degree of graphene coupling to the substrate and (2) exposure to oxygen and moisture. Thermal annealing induces a pronounced structural distortion due to close coupling to SiO2 and activates the ability of diatomic oxygen to accept charge from graphene. Gas flow experiments show that dry oxygen reversibly dopes graphene; doping becomes stronger and more irreversible in the presence of moisture and over long periods of time. We propose that oxygen molecular anions are stabilized by water solvation and electrostatic binding to the silicon dioxide surface.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/0395f731869f7a054ed7d48f72d2422eb59b5768

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In Materials Chemistry

1. O. Frank
2. F. Schedin
3. Kai Liu
4. K. Kumar
5. Yinghui Sun
6. Xuewen Wang
7. James M. Tour
8. Youn-Su Kim

Citations in the corpus

• The influence of thermal annealing to remove polymeric residue on the electronic doping and morphological characteristics of graphene (2013, background): “Additionally, the broadened linewidths, in conjunction with the upshifts of xG 0 and xG, indicate high levels of hole doping [33], which is attributed to a combination of increased water contact on CVD graphene stemming from the interfacial graphene–substrate water layer [43–45] following the wet tr”
• Large-scale growth and characterizations of nitrogen-doped monolayer graphene sheets. (2011, positive): “The devices were kept in the vacuum chamber over 7 days before electrical characterization.(26,27)ASEM imageofnitrogen-dopedgraphenewith Ti/Pt electrodes butwithout oxygen-plasmaetching is also shown in Figure S1 (Supporting Information), indicating that the large-areanitrogen-dopedgraphene sheets t”
• Chemical and structural stability of 2D layered materials (2019, background): “[143] Ryu S, Liu L, Berciaud S, Yu Y-J, Liu H, Kim P, Flynn G W”
• Evaluating arbitrary strain configurations and doping in graphene with Raman spectroscopy (2017, background): “The substrate and adsorbed or intercalated substances typically induce a Fermi level shift and dope graphene [9, 10].”
• Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters (2012, neutral): “7 2 * exp exp 1 b b B B eV J A T k T k T φ ⎛ ⎞ ⎛ ⎞ ⎛ ⎞ = − − ⎜ ⎟ ⎜ ⎟ ⎜ ⎟ ⎜ ⎟ ⎝ ⎠ ⎝ ⎠ ⎝ ⎠ (9) where J is the current density, A is the effective Richardson constant, T is the temperature, kB is the Boltzmann constant, and b φ is the Schottky barrier height.”