VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY IN SPINTRONIC DEVICES

By P. Amiri, Kang L. Wang. 2012

136 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/038a2c8fe01b5c2a0e3174801d07d16d2cd4b597

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Juan G. Alzate
2. P. Amiri
3. Kang L. Wang

In Electrical and Electronic Engineering

1. Kang L. Wang

In Electronic, Optical and Magnetic Materials

1. Juan G. Alzate
2. P. Amiri
3. Kang L. Wang

Citations in the corpus

• Low-power non-volatile spintronic memory: STT-RAM and beyond (2013, background): “In particular, the ultimate scalability of STT-RAM in terms of density and energy may be limited by the large currents needed to switch the device; thus, a voltage control scheme is expected to translate into a reduction in the switching energy and increased densities in a future magnetoelectric RAM”