Spin-Transfer Torque MRAM (STT-MRAM): Challenges and Prospects

By Y. Huai. 2008

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Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications (2017, background): “These phenomena are of interest not only from a fundamental point of view but also because they could have applications invarious areas including, but not limited to, magnetic storage [hard disk drives (HDD) (Thompson and Best, 2000; Chappert, Fert, and Van Dau, 2007)], solid-state magnetic memories”
Phase-Change Memory—Towards a Storage-Class Memory (2017, background): “switching random access memory [19] and magnetoresistive random access memory [20].”
Low-power non-volatile spintronic memory: STT-RAM and beyond (2013, background): “Given that the thermal stability in P-STT is determined by the perpendicular anisotropy of the free layer (and not by the elliptical shape as in I-STT), the P-STT structures can be made in circular shape [32, 33].”