Thermal contact resistance between graphene and silicon dioxide

By Zhen Chen, W. Jang, Wenzhong Bao, C. N. Lau, C. Dames. 2009

342 citations recorded by the source corpus.

View Paper: https://www.semanticscholar.org/paper/02ddfadd567769b74886c8a23adaf90dc9af6967

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In Materials Chemistry

Citations in the corpus

Two-Dimensional Materials for Thermal Management Applications (2018, background): “However, it was measured that the interface thermal conductance of graphene/SiO2 interface is roughly equal to or higher than that of graphene/h-BN.(100,101) Although the inconsistency is dominantly attributed to experimental uncertainties for different measurement methods and variation in sample qu”
Thermal properties of graphene and nanostructured carbon materials. (2011, methodology): “lly higher than Kapitza resistance due to interface imperfections. Heat conduction across graphene or FLG was measured by several different techniques, including electrical 3- [98], Raman-electrical [99, 100], and optical pump-and-probe [101] methods. The thermo-reflectance technique was used to stu”
Thermal Boundary Conductance: A Materials Science Perspective (2016, methodology): “and without the film, may be used (76, 79, 80).”
Progress, challenges, and opportunities in two-dimensional materials beyond graphene. (2013, background): “with a dielectric or metal has been measured to be in the range of (1 5) 10 8 K m(2) W 1 at room temperature.(273) 276 These values are not very large for the van der Waals interface, likely because graphene is rather conformal to the surface roughness.”
Graphene related materials for thermal management (2019, background): “and SiO2 substrate over a temperature range from 42 K to 310 K [322].”
Energy dissipation and transport in nanoscale devices (2010, background): “Finally, the thermal boundary resistance (TBR) at the interfaces between the devices and its environment can also be a limiting factor, as is the case with nanotubes [30, 91], phase-change memory devices [92, 93], and to some extent graphene transistors [94, 95].”