Thin‐film solar cells: device measurements and analysis

By S. Hegedus, W. Shafarman. 2004

1,149 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/007ce7bbf1ff804832ac03fc2e67c5ee0d3d2322

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Tayfun Gokmen
2. Yu Zhu
3. T. Unold
4. M. A. Alam
5. O. Gunawan
6. Rakesh Agrawal
7. Pulickel M. Ajayan
8. Grayson M. Ford

In Electrical and Electronic Engineering

1. J. Even
2. Rakesh Agrawal
3. C. Hages
4. M. Kanatzidis
5. H. Hillhouse
6. C. Stoumpos
7. Tayfun Gokmen
8. A. Mohite

Citations in the corpus

• Electrodeposited Cu2ZnSnSe4 thin film solar cell with 7% power conversion efficiency (2014, background): “The detailed device parameters based on the standard model [26] including open-circuit voltage (Voc), short-circuit current (Jsc), fill factor (FF), series resistance (Rs), shunt resistance (Rsh), and band gap (Eg) are listed in Table I together with related literature results.”
• Ink formulation and low‐temperature incorporation of sodium to yield 12% efficient Cu(In,Ga)(S,Se)2 solar cells from sulfide nanocrystal inks (2013, methodology): “Comparing the standard short-circuit current EQEwith an EQE measured with a reverse voltage bias is a powerful tool to separate electronic and optical losses because only the former should be affected by the applied bias [27].”
• Improved performance of Ge‐alloyed CZTGeSSe thin‐film solar cells through control of elemental losses (2015, methodology): “Band gaps were derived by assuming dominant collection in the space charge region, W, according to EQE≈ 1—Exp[ αW], and a direct gap absorption coefficient α ∝ (E-EG)1/2 [16,27].”
• SHORT COMMUNICATION: ACCELERATED PUBLICATION: Diode characteristics in state‐of‐the‐art ZnO/CdS/Cu(In1−xGax)Se2 solar cells (2005, background): “Specifically, and simplistically, considering Equation (3) above: The J0 increase with Ga content in the absorber could be associated to large changes in electrical transport properties of the p and/or n materials composing the junction (parameters like ND;A).”