Native defects in bulk and monolayer MoS 2 from first principles

By H. Komsa, A. Krasheninnikov. 2015

423 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/003b9ecdd05f4377dc592ccf67d899d580b0225e

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Filippo Giubileo
2. Zhenhua Ni
3. Zhangting Wu
4. A. Di Bartolomeo

In Materials Chemistry

1. Filippo Giubileo
2. Zhangting Wu
3. Giuseppe Luongo
4. L. Iemmo
5. A. Di Bartolomeo
6. Tobias Foller
7. L. Genovese
8. M. Schleberger

Citations in the corpus

• Spectroscopic investigation of defects in two-dimensional materials (2016, background): “In the case of 1H phase TMDs, there are four positions available for an adatom: on top of the metal or chalcogen atoms, and the hollow site slightly above the center of the hexagon on the metal or chalcogen atomic plane [59].”
• Hysteresis in the transfer characteristics of MoS2 transistors (2017, background): “Native n-doping is commonly attributed to the omnipresent electron-donating sulfur vacancies especially present in exfoliated MoS2 [15, 48–50], even though the n-doping character of sulfur vacancies has been disputed [51].”