Defect related issues in the current roll-off in InGaN based light emitting diodes
By B. Monemar, B. Sernelius. 2007
287 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/ffea234c13b16a4cb4528d4f6696842a347f4a28
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In Atomic and Molecular Physics, and Optics
In Condensed Matter Physics
In Electrical and Electronic Engineering
Citations in the corpus
- Visible-Light Communications Using a CMOS-Controlled Micro-Light- Emitting-Diode Array (2012, background): “recombination at defect sites at high carrier density [11], leakage of electrons out of the active region of the device [12] and poor”
- LEDs for Solid-State Lighting: Performance Challenges and Recent Advances (2009, background): “efficiency droop are varied, and include carrier delocalization [54], screening of excitons [55], defect-assisted tunneling of carriers out of the active region [56], Auger recombi-”