Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer
By Prasert Sinsermsuksakul, Katy Hartman, Sang Bok Kim, Jaeyeong Heo, Leizhi Sun, H. Park, R. Chakraborty, Tonio Buonassisi, R. Gordon. 2013
348 citations recorded by the source corpus.
SnS is a promising earth-abundant material for photovoltaic applications. Heterojuction solar cells were made by vapor deposition of p-type tin(II) sulfide, SnS, and n-type zinc oxysulfide, Zn(O,S), using a device structure of soda-lime glass/Mo/SnS/Zn(O,S)/ZnO/ITO. A record efficiency was achieved for SnS-based thin-film solar cells by varying the oxygen-to-sulfur ratio in Zn(O,S). Increasing the sulfur content in Zn(O,S) raises the conduction band offset between Zn(O,S) and SnS to an optimum slightly positive value. A record SnS/Zn(O,S) solar cell with a S/Zn ratio of 0.37 exhibits short circuit current density (Jsc), open circuit voltage (Voc), and fill factor (FF) of 19.4 mA/cm2, 0.244 V, and 42.97%, respectively, as well as an NREL-certified total-area power-conversion efficiency of 2.04% and an uncertified active-area efficiency of 2.46%.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/ff169b9417204b4d06bb16f94b11035242d8cf32
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Citations in the corpus
- Development of sulphurized SnS thin film solar cells (2015, neutral): “Harvard group [22, 48, 79] reported 244 mV of Voc initially and it enhanced 128 mV by”
- Co‐optimization of SnS absorber and Zn(O,S) buffer materials for improved solar cells (2015, background): “46%) with Zn(O,S) buffer layers [9], and an efficiency of 2.”