Drain-bias dependence of threshold voltage stability of amorphous silicon TFTs

By Karim S. Karim, Arokia Nathan, M. Hack, William I. Milne. IEEE Electron Device Letters, 2004

171 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d78c7b26f1e2851520141dd1b749d51f8629f6ae

How researchers see this paper

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In Electrical and Electronic Engineering

1. G. Reza Chaji
2. S. Jafarabadi Ashtiani
3. Arokia Nathan

Citations in the corpus

• Driving schemes for a-Si and LTPS AMOLED displays (2005, background): “Based on experimental and analytical studies presented in [12] and [13], in addition to the gate-source voltage, -shift in a-Si:H TFTs also depends on the drain voltage, and for higher drain voltages the -shift is smaller.”