FDSOI devices with thin BOX and ground plane integration for 32nm node and below

By C. Fenouillet-Béranger, S. Denorme, P. Perreau, C. Buj, O. Faynot, F. Andrieu, L. Tosti, S. Barnola, T. Salvetat, X. Garros and 18 more. European Solid-State Device Research Conference, 2008

149 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/fe3c7eebce069b648272253b7b86265aa91225ae