The electronic properties of bilayer graphene

By E. McCann, M. Koshino. Reports on progress in physics. Physical Society, 2012

1,072 citations recorded by the source corpus.

We review the electronic properties of bilayer graphene, beginning with a description of the tight-binding model of bilayer graphene and the derivation of the effective Hamiltonian describing massive chiral quasiparticles in two parabolic bands at low energies. We take into account five tight-binding parameters of the Slonczewski–Weiss–McClure model of bulk graphite plus intra- and interlayer asymmetry between atomic sites which induce band gaps in the low-energy spectrum. The Hartree model of screening and band-gap opening due to interlayer asymmetry in the presence of external gates is presented. The tight-binding model is used to describe optical and transport properties including the integer quantum Hall effect, and we also discuss orbital magnetism, phonons and the influence of strain on electronic properties. We conclude with an overview of electronic interaction effects.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry, Physical and Theoretical Chemistry

View Paper: https://www.semanticscholar.org/paper/fe0264f3da31546c8433355249714ecc472d8f4c

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Citations in the corpus

Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction (2015, background): “ e H ik a k & & & (63) and corresponds to two eigenvalues, one positive and one negative, for each value of k & , resulting in the two branches illustrated in Fig. 6(b) [3][9][11][64]-[65]: & 3 2 4 cos 2 cos 2 1 4 cos x 2y ak ak E r k r t (64) In eq. (63) and (64), k & is t”
Cascade of isospin phase transitions in Bernal-stacked bilayer graphene at zero magnetic field (2021, background): “1c) at the saddle point within each band [17, 37].”
Electronic properties of graphene-based bilayer systems (2015, methodology): “The energy εL, at which the saddle points are located, is estimated [5] to be of the order of 1 meV.”
Origin and magnitude of 'designer' spin-orbit interaction in graphene on semiconducting transition metal dichalcogenides (2016, background): “The literature describes BLG in terms of two Dirac Hamiltonians of the two constituent monolayers coupled by the γ1 term describing interlayer nearest-neighbor hopping [47,54,55].”