Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications

By S. Maikap, H. Y. Lee, T. Wang, P. Tzeng, C. C. Wang, L. Lee, Kun Liu, J. Yang, M. Tsai. 2007

135 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/fdeaca9dfbc2d2b82f2d96d695c5122269a24810