Origin of the energy bandgap in epitaxial graphene
By Shuyun Zhou, D. Siegel, A. Fedorov, F. E. Gabaly, A. Schmid, A. C. Castro Neto, D.-H. Lee, A. Lanzara. 2008
180 citations recorded by the source corpus.
We studied the effect of quantum confinement on the size of the band gap in single layer epitaxial graphene. Samples with different graphene terrace sizes are studied by using low energy electron microscopy (LEEM) and angle-resolved photoemission spectroscopy (ARPES). The direct correlation between the terrace size extracted from LEEM and the gap size extracted from ARPES shows that quantum confinement alone cannot account for the large gap observed in epitaxial graphene samples.
Subfields: Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/fcdb6785fb114f4a82792135d9db5ad454e9bff3
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In Materials Chemistry
Citations in the corpus
- Production, properties and potential of graphene (2010, background): “[32, 184] The gap is partially modulated by lateral size confinement,[185-187] but infortunately, upon device fabrication, the effective gap is almost negligible probably due to the alteration of the substrate-graphene interface.”
- Graphene-Based Materials for Biosensors: A Review (2017, background): “A number of researchers have studied intensively the energy bandgap formation, growth mechanism, and the symmetry breaking at the graphene-SiC interface [63,64].”
- Colloquium: Graphene spectroscopy (2014, methodology): “From a high resolution ARPES study Zhou et al. (2008c) concluded that the electron-phonon coupling is dominated by the following phonon modes: A1g phonon at approximately 150± 15 meV near the BZ corner, E2g phonon (∼ 200 meV) at the zone center, and the out-of-plane phonon at 60 meV.”
- Experimental Review of Graphene (2011, background): “It is believed that the existence of the observed band gap is due to interactions with the substrate that cause the symmetry of graphene’s π-bonds to be broken [79].”