Large negative magnetoresistance effects in Co2Cr0.6Fe0.4Al
By T. Block, Claudia Felser, G. Jakob, J. Ensling, B. Mühling, P. Gütlich, R. Cava. 2003
193 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/fc4994f737804a191974de8afa8219d169e39aef
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In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- Heusler 4.0: Tunable Materials (2016, background): “4Al (27) and Co2MnSi into spin-valve structures succeeded in delivering the expected MR-values in the range of MR ≈ 2000 %, after many years of materials and interface engineering (28).”
- Roadmap for Emerging Materials for Spintronic Device Applications (2015, methodology): “[3] measured a large tunneling magnetoresistance (TMR) in bulk full-Heusler Co2(Cr, Fe)Si alloy, followed by a similar measurement in a thin-film form [4].”