Reversible and irreversible trapping at room temperature in poly(thiophene) thin-film transistors

By Alberto Salleo, F. Endicott, Robert A. Street. 2005

152 citations recorded by the source corpus.

We measured the bias stress characteristics of poly(thiophene) semicrystalline thin-film transistors (TFTs) as a function stress times, gate voltages, and duty cycles. At room temperature, the bias stress has two components: a fast reversible component and a slow long-lived component. We hypothesize that the irreversible component is due to charge trapping in the disordered areas of the semiconductor film. At low duty cycle (<2%), the fast bias stress component is reversed during the off-part of the cycle therefore the observed threshold voltage (VT) shift is only caused by long-lived trapping. Long-lived trapping follows power-law kinetics with a time exponent approximately equal to 0.37. We use these findings to estimate the lifetime of TFTs used as switches in display backplanes.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/fc2ef55e0cec923b397cb453acf6c35f8a533968