Nature of electronic states in atomically thin MoS₂ field-effect transistors.
By S. Ghatak, A. N. Pal, A. Ghosh. ACS Nano, 2011
854 citations recorded by the source corpus.
We present low-temperature electrical transport experiments in five field-effect transistor devices consisting of monolayer, bilayer, and trilayer MoS(2) films, mechanically exfoliated onto Si/SiO(2) substrate. Our experiments reveal that the electronic states in all films are localized well up to room temperature over the experimentally accessible range of gate voltage. This manifests in two-dimensional (2D) variable range hopping (VRH) at high temperatures, while below ∼30 K, the conductivity displays oscillatory structures in gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T(0)) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges in the substrate is the dominant source of disorder in MoS(2) field-effect devices, which leads to carrier localization, as well.
Subfields: Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/fa823c028556892a97c5cfa07fbb3030ebf60765
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Citations in the corpus
- Electrical transport properties of single-layer WS2. (2014, methodology): “8/kBDT) 1/2 where D is the density of states.(44) Using the values of D extracted from the high-temperature regime (Figure 5b), together with the values of T0 extracted from the VRH model (Figure 5c), we can determine the localization length as a function of the gate voltage.”