Temperature dependent band gap in PbX (X = S, Se, Te)

By Z. M. Gibbs, Hyoungchul Kim, Heng Wang, Robert L. White, F. Drymiotis, M. Kaviany, G. J. Snyder. 2013

155 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/fa7fd215568ef20d801e4d8376b6fd198007a770

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Xun Shi
2. Lidong Chen
3. Li-dong Zhao
4. Xiao Zhang
5. C. Uher
6. Jihui Yang
7. M. Kanatzidis
8. Y. Pei

In Materials Chemistry

1. Lidong Chen
2. Xun Shi
3. Li-dong Zhao
4. C. Uher
5. Xiao Zhang
6. Wenqing Zhang
7. Jihui Yang
8. David J. Singh

Citations in the corpus

• Thermoelectric materials: Energy conversion between heat and electricity (2015, background): “PbTe has a fascinating valence band structure; in addition to the upper light hole band at the L points of the highly symmetric Brillouin zone, there exists a second valence (with a heavy effective mass, thus called heavy hole band) band (S) which lies energetically below it [5,15,48,49], as shown i”
• On the tuning of electrical and thermal transport in thermoelectrics: an integrated theory–experiment perspective (2016, result): “The results of Gibbs et al.26 further supported to the twofold contribution (lattice expansion and atomic displacement) to the L–Σ convergence, with the converged temperature was 700 K for PbTe.”