Low-Loss Singlemode PECVD Silicon Nitride Photonic Wire Waveguides for 532–900 nm Wavelength Window Fabricated Within a CMOS Pilot Line

By A. Subramanian, P. Neutens, A. Dhakal, R. Jansen, T. Claes, X. Rottenberg, F. Peyskens, Shankar Kumar Selvaraja, P. Hélin, B. Dubois and 5 more. IEEE Photonics Journal, 2013

256 citations recorded by the source corpus.

PECVD silicon nitride photonic wire waveguides have been fabricated in a CMOS pilot line. Both clad and unclad single mode wire waveguides were measured at λ = 532, 780, and 900 nm, respectively. The dependence of loss on wire width, wavelength, and cladding is discussed in detail. Cladded multimode and singlemode waveguides show a loss well below 1 dB/cm in the 532-900 nm wavelength range. For singlemode unclad waveguides, losses 1 dB/cm were achieved at λ = 900 nm, whereas losses were measured in the range of 1-3 dB/cm for λ = 780 and 532 nm, respectively.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/fa5e93f7a9531777fe154850939fea7c47e100b9

Citations in the corpus

• Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits (2017, unknown): “5 dB/cm have been demonstrated for the visible and the very near IR wavelength range for strip waveguides [35].”