Magnetoresistance of Half-Metallic Oxide Nanocontacts

By J. Versluijs, M. Bari, J. Coey. 2001

214 citations recorded by the source corpus.

Magnetoresistive effects (R(0)- R(H))/R(H) exceeding 500% are found at room temperature in a field of 7mT in nanocontacts between Fe{sub 3}O {sub 4} crystallites. The shape of the I(V) curve depends on field and the magnitude of the magnetoresistance is correlated with the resistance, the largest effects occurring when R>100 k{Omega} . The explanation proposed involves hopping transport of spin-polarized electrons through a narrow domain wall pinned at the nanocontact; spin pressure on the domain wall pushes it out into the electrode, leading to the nonlinearity of the I(V) characteristic. Application of current-induced wall motion in a simple fast-switching magnetic memory element is proposed.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/fa5299e417e4fc45eebe48d565745a44221a7ae0

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In Atomic and Molecular Physics, and Optics

In Electronic, Optical and Magnetic Materials

Citations in the corpus

Spin-polarised currents and magnetic domain walls (2005, background): “The geometrically constrained walls [298] found in nanocontacts [319] may also experience large forces as w may be very high there.”
Spintronics: Fundamentals and applications (2004, unknown): “This behavior, also known as ballistic magnetoresistance, has already been studied in a large number of materials and geometries (Bruno, 1999; Chung et al., 2002; Garcia et al., 1999; Imamura et al., 2000; Tatara et al., 1999; Versluijs et al., 2001).”
Extrinsic magnetotransport phenomena in ferromagnetic oxides (2001, methodology): “Versluijs et al (2001) studied the magnetoresistance of Fe3O4 nanocontacts in an experimental arrangement similar to that of Garćıa et al (1999).”