Production of oriented nitrogen-vacancy color centers in synthetic diamond
By A. Edmonds, U. D’Haenens-Johansson, M. Newton, K. Fu, Charles M. Santori, Raymond G. Beausoleil, Daniel J. Twitchen, M. I. O. Physics, U. Warwick, U. D. O. Physics and 8 more. 2011
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The negatively charged nitrogen-vacancy (${\mathrm{NV}}^{\ensuremath{-}}$) center in diamond is an attractive candidate for applications that range from magnetometry to quantum information processing. Here we show that only a fraction of the nitrogen (typically $l0.5$%) incorporated during homoepitaxial diamond growth by chemical vapor deposition (CVD) is in the form of undecorated ${\mathrm{NV}}^{\ensuremath{-}}$ centers. Furthermore, studies on CVD diamond grown on $(110)$-oriented substrates show a near 100% preferential orientation of NV centers along only the $[111]$ and $[\overline{1}\overline{1}1]$ directions, rather than the four possible orientations. The results indicate that NV centers grow in as units, as the diamond is deposited, rather than by migration and association of their components. The NV unit of the ${\mathrm{NVH}}^{\ensuremath{-}}$ is similarly preferentially oriented, but it is not possible to determine whether this defect was formed by H capture at a preferentially aligned NV center or as a complete unit. Reducing the number of NV orientations from four orientations to two orientations should lead to increased optically detected magnetic resonance contrast and thus improved magnetic sensitivity in ensemble-based magnetometry.
Subfields: Geophysics, Materials Chemistry, Mechanics of Materials
View Paper: https://www.semanticscholar.org/paper/fa2bf03f0829976b5d69a0a00813ebc117df490c
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Citations in the corpus
- Quantum nanophotonics in diamond [Invited] (2016, background): “Initial studies showed that diamond grown with homoepitaxial CVD growth on [110] [143] and [100] [144] oriented substrates mainly supports two NV orientations when the growth parameters are controlled precisely.”
- Sensitivity optimization for NV-diamond magnetometry (2019, background): “…electronic spins} encompasses dephasing from the remaining defects in the electronic spin bath, such as negatively charged single vacancies (Baranov et al., 2017), vacancy clusters (Iakoubovskii and Stesmans, 2002; Twitchen 14 et al., 1999b) and hydrogen-containing defects (Edmonds et al., 2012).”