Activation energy of heterojunction diode currents in the limit of interface recombination

By R. Scheer. 2009

181 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/f9df4c9937d3e6e09b82971f4e6a52c0afcfa9fe

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. T. Unold
2. O. Hansen
3. Rakesh Agrawal
4. C. Hages
5. C. Miskin
6. A. Crovetto

In Electrical and Electronic Engineering

1. C. Hages
2. T. Unold
3. O. Hansen
4. Rakesh Agrawal
5. C. Miskin
6. A. Crovetto

Citations in the corpus

• What is the band alignment of Cu 2 ZnSn(S,Se) 4 solar cells? (2017, background): “duction band minimum (CBM) of CdS and the valence band maximum (VBM) of CZTS due to cross-recombination [9].”
• Improved performance of Ge‐alloyed CZTGeSSe thin‐film solar cells through control of elemental losses (2015, background): “The increased device efficiency is attributed to improvements in both carrier collection and VOC for the CZTGeSSe device.”