Blue Light-Emitting Diode Based on ZnO
By A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, Hideo Ohno, S. Chichibu, M. Kawasaki. 2005
398 citations recorded by the source corpus.
A near-band-edge bluish electroluminescence (EL) band centered at around 440 nm was observed from ZnO p–i–n homojunction diodes through a semi-transparent electrode deposited on the p-type ZnO top layer. The EL peak energy coincided with the photoluminescence peak energy of an equivalent p-type ZnO layer, indicating that the electron injection from the n-type layer to the p-type layer dominates the current, giving rise to the radiative recombination in the p-type layer. The imbalance in charge injection is considered to originate from the lower majority carrier concentration in the p-type layer, which is one or two orders of magnitude lower than that in the n-type one. The current-voltage characteristics showed the presence of series resistance of several hundreds ohms, corresponding to the current spread resistance within the bottom n-type ZnO. The employment of conducting ZnO substrates may solve the latter problem.
Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/f8c1f2b58735eff4ca65ad32ffa665b79650dafa
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- Recent Advances in ZnO-Based Light-Emitting Diodes (2010, methodology): “[132], [133] proposed a repeated temperature modulation technique as a reliable and reproducible way to fabricate p-type ZnO.”
- ZnO Devices and Applications: A Review of Current Status and Future Prospects (2010, background): “Finally, gas/biosensor and solar cell applications exploiting the unique properties of ZnO nanostructures are discussed.”