Temperature dependence of the voltage-controlled perpendicular anisotropy in nanoscale MgO|CoFeB|Ta magnetic tunnel junctions

By Juan G. Alzate, P. Amiri, Guoqiang Yu, P. Upadhyaya, Jordan A. Katine, J. Langer, B. Ocker, I. Krivorotov, Kang L. Wang. 2014

133 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/f888bdca7a31c6c1ac2a9d9ddcc369b6c651d9b7

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In Atomic and Molecular Physics, and Optics

1. Juan G. Alzate
2. Kang L. Wang
3. Jordan A. Katine

In Materials Chemistry

1. Kang L. Wang

Citations in the corpus

• Electric-Field-Controlled Magnetoelectric RAM: Progress, Challenges, and Scaling (2015, methodology): “Typical values of interface anisotropy and VCMA in the widely used Ta|CoFeB|MgO-based MTJ material structure are Ki ∼ 1–2 mJ/m2 [6], [7], [25], [38], while the magnitude of the VCMA coefficient is typically in the range of 30–50 fJ/V · m [2], [24], [25], [38].”