Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN

By T. Nishida, H. Saito, N. Kobayashi. 2001

285 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/f8552e8ae687e2198c3326062d0bd2716faa16eb

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In Biomedical Engineering

1. A. I. Zhmakin

In Condensed Matter Physics

1. A. I. Zhmakin

In Electronic, Optical and Magnetic Materials

1. A. I. Zhmakin

Citations in the corpus

• Enhancement of light extraction from light emitting diodes (2011, background): “Decreasing knon is achieved by growing higher quality layers using advanced buffer layers [53] (such as double MgxNy/AlN [54] and GaN/SiN [55] buffer layers on the low-defect foreign substrates or using native GaN ones [56–60] (manufactured, for example, by epitaxial lateral overgrowth [61–64], pend”