Charge-trapping device structure of SiO2∕SiN∕high-k dielectric Al2O3 for high-density flash memory

By Changhyun Lee, S. Hur, Y. Shin, Jeong-Hyuk Choi, Donggun Park, Kinam Kim. 2005

209 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/f84f3f427be529ee032a8a1ecc722e6d1c8147bd