Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors
By A. Lisauskas, Ullrich R. Pfeiffer, Erik Öjefors, P. Bolívar, D. Glaab, H. Roskos. 2009
333 citations recorded by the source corpus.
Subfields: Astronomy and Astrophysics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/f7b74690643fc38d52569b6312bc299af96dda96
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- THz Active Imaging Systems With Real-Time Capabilities (2011, background): “where each detector pixel contained an on-chip integrated antenna, a differential pair of FETs and an amplifier, with a commercial foundry process [70], [71], [73], [74].”
- CMOS Integrated Antenna-Coupled Field-Effect Transistors for the Detection of Radiation From 0.2 to 4.3 THz (2012, methodology): “The practical interest in MOSFET-based terahertz detectors and mixers strongly increased, after the first antenna-coupled MOSFET detectors and few-pixel focal plane arrays were implemented successfully for 645 GHz using a 250-nm CMOS foundry process, which did not need to be supplemented by addition”