Bulk Fermi surface coexistence with Dirac surface state in Bi 2 Se 3 : A comparison of photoemission and Shubnikov–de Haas measurements
By J. Analytis, J. Chu, Yulin Chen, F. Corredor, R. McDonald, Zhi-xun Shen, Ian R. Fisher. 2010
352 citations recorded by the source corpus.
Shubnikov-de Haas (SdH) oscillations and angle-resolved photoemission spectroscopy (ARPES) are used to probe the Fermi surface of single crystals of ${\text{Bi}}_{2}{\text{Se}}_{3}$. We find that SdH and ARPES probes quantitatively agree on measurements of the effective mass and bulk band dispersion. In high carrier density samples, the two probes also agree in the exact position of the Fermi level ${E}_{F}$, but for lower carrier density samples discrepancies emerge in the position of ${E}_{F}$. In particular, SdH reveals a bulk three-dimensional Fermi surface for samples with carrier densities as low as ${10}^{17}\text{ }{\text{cm}}^{\ensuremath{-}3}$. We suggest a simple mechanism to explain these differences and discuss consequences for existing and future transport studies of topological insulators.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/f71a9a1fc12d5a432df5c1196d43a8a5a3714f0f
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In Atomic and Molecular Physics, and Optics
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Citations in the corpus
- A topological insulator surface under strong Coulomb, magnetic and disorder perturbations (2011, background): “A negative charge is known to be trapped at the surface in as-grown cleaved Bi2Se3 samples and screened by bulk electrons [8, 9], raising the question of how many-body Coulomb interactions from a high surface charge density will affect numerical predictions.”