AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

By A. Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, Wojciech Knap, S. Vandenbrouk, K. Madjour, D. Théron, C. Gaquière, M. Poisson and 3 more. 2010

152 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/f7093142647207481c6f42dac8159a20cbea781e