Formation Mechanism of Solution-Processed Nanocrystalline InGaZnO Thin Film as Active Channel Layer in Thin-Film Transistor

By G. Kim, H. Shin, B. Ahn, K. Kim, Won Jun Park, Hyun Jae Kim. 2009

191 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/f7002a4440c8e1ff58126db1db38c46f1abb8386