Intrinsic transistor reliability improvements from 22nm tri-gate technology

By S. Ramey, A. Ashutosh, C. Auth, J. Clifford, M. Hattendorf, J. Hicks, R. James, A. Rahman, V. Sharma, A. St. Amour and 1 more. IEEE International Reliability Physics Symposium, 2013

165 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/f61a7cbc0dd63eea4ad99d0ca50d5eb51797d29f