Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2.
By K. He, C. Poole, K. Mak, J. Shan. Nano letters (Print), 2013
923 citations recorded by the source corpus.
We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of ~70 meV per percent applied strain for direct gap transitions, and at a rate 1.6 times larger for indirect gap transitions, has been determined by absorption and photoluminescence spectroscopy. Our result, in excellent agreement with first principles calculations, demonstrates the potential of two-dimensional crystals for applications in flexible electronics and optoelectronics.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/f5cb864a3ebbaae6f8bb26c49fe14dc2b03b13ca
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In Electronic, Optical and Magnetic Materials
In Materials Chemistry
- A. Castellanos-Gómez
- Rui Huang
- Thomas Mueller
- Harold S. Park
- E. Malic
- Teng Zhang
- Huajian Gao
- Shengxue Yang
Citations in the corpus
- Excitons in atomically thin 2D semiconductors and their applications (2017, background): “[47] demonstrated the continuous tuning of the electronic structure when applying a uniaxial tensile strain.”
- Strain-induced direct–indirect bandgap transition and phonon modulation in monolayer WS2 (2015, background): “2%, there was an obvious redshift in the PL emission, while the line shape remained unchanged, which is similar to previous observations for strained monolayer MoS2 [22, 24].”
- A review on mechanics and mechanical properties of 2D materials—Graphene and beyond (2016, background): “In contrast, uniaxial strain applied to monolayer MoS2 exhibits a red-shift of photoluminescence (PL) and absorption spectrum peaks, and a decrease in PL intensity due to the transition toward indirect band gap [254,258].”
- Mechanical properties of two-dimensional materials and their applications (2018, background): “It was observed that both the absorption and PL peaks of monolayer MoS2 redshift by ~70 meV for the direct band gap and ~112 meV for the indirect band gap per percentage of strain [241], similar to 46 meV/% and 86 meV/% for the indirect gap region of monolayer and bilayer MoS2 [245].”