Strong spin-orbit interaction and helical hole states in Ge/Si nanowires
By Christoph Kloeffel, M. Trif, Daniel Loss. 2011
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Department of Physics and Astronomy, University of California, Los Angeles, California 90095, USA(Dated: July 25, 2011)Westudytheoreticallythelow-energyholestatesofGe /Sicore /shellnanowires. Thelow-energyvalencebandis quasi-degenerate, formed by two doublets of di erent orbital angular momentum, and can be controlled viathe relative shell thickness and via external elds. We nd that direct (dipolar) coupling to a moderate electriceld leads to an unusually large spin-orbit interaction of Rashba-type on the order of meV which gives rise topronounced helical states enabling electrical spin-control. The system allows for quantum dots and spin-qubitswith energy levels that can vary from nearly zero to several meV, depending on the relative shell thickness.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics
View Paper: https://www.semanticscholar.org/paper/f50644edcffcffe67c4288de7c411657b3f70131
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In Atomic and Molecular Physics, and Optics
In Condensed Matter Physics
Citations in the corpus
- Silicon quantum electronics (2012, background): “According to the work by Kloeffel et al. (2011), the unusually strong spin-orbit coupling makes them particularly attractive candidates for quantum information processing via electric-dipole induce spin resonance (Golovach et al., 2006; Nadj-Perge et al., 2010; Nowack et al., 2007), and for…”