Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si

By Daehwan Jung, R. Herrick, Justin C. Norman, Katherine Turnlund, C. Jan, Kaiyin Feng, Arthur C. Gossard, John E. Bowers. 2018

143 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/f4f3b3d894af0780205902af2a13f6c286ca0861

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Weng W. Chow
2. John E. Bowers

In Electrical and Electronic Engineering

1. Justin C. Norman
2. Weng W. Chow
3. John E. Bowers
4. Po Dong

Citations in the corpus

• A Review of High-Performance Quantum Dot Lasers on Silicon (2019, background): “reported [53].”
• How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches (2018, background): “Recently published extrapolated device life time of more than 10×10(6) h for an InAs QD laser on Si with a defect density of 7×10(6) cm clearly underlines the potential of QD lasers [107, 137, 138].”