Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates

By Hans Mertens, R. Ritzenthaler, A. Chasin, Tom Schram, Eddy Kunnen, A. Hikavyy, L. Ragnarsson, Harold Dekkers, T. Hopf, K. Wostyn and 16 more. International Electron Devices Meeting, 2016

144 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/f4eab1d46391abdef3c108bc8349430508053954