An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates

By Y. Hwang, Jin-Suk Seo, Jei-Moon Yun, Hyungjin Park, Shinhyuk Yang, S. Park, B. Bae. 2013

220 citations recorded by the source corpus.

Metal oxide semiconductor structures can be both electrically conductive and optically transparent — an attractive combination for electronic devices. Their fabrication has typically involved the deposition of the precursors under vacuum, a method that is costly and can result in materials lacking uniformity over large surface areas. A team of researchers led by Byeong-Soo Bae at the Korea Advanced Institute of Science and Technology has alleviated these issues by devising a low-temperature fabrication route in aqueous media. Solution-based processes had been investigated, but often involved alcohol solvents that require high processing temperatures or complex and unstable precursors. An indium oxide thin film has now been prepared from an aqueous solution, at temperatures lower than 200 °C, that further served as the active layer of a fully transparent thin-film transistor. In addition, using plastic as a substrate enabled the construction of a transparent, flexible device.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/f4e1122f8ddc7b8d73762d9bf970764d9bcfa5df