Smooth and high-rate reactive ion etching of diamond

By Y. Ando, Y. Nishibayashi, K. Kobashi, T. Hirao, K. Oura. 2002

136 citations recorded by the source corpus.

Diamond surfaces with patterned Al masks were etched by a reactive ion etching (RIE) system under conditions that the RF power was 100-280 W, the CF 4 /O 2 ratio was 0-12.5% and the gas pressure 2-40 Pa. It was found that the roughness of the etched diamond surface decreased with an increase in the CF 4 /O 2 ratio, although this reduced the selective etching ratio of diamond against Al. The gas pressure also affected the surface roughness and the etching anisotropy. The etching rate of diamond considerably increased upon a small addition of CF 4 in O 2 . Based on these results, we were successful in an anisotropic etching of diamond at a very high rate (∼9.5 μm/h) with a smooth etched surface (R a < 0.4 nm), a high selective etching ratio of diamond vs. Al, and a high aspect ratio (the height/diameter was ∼8 for array structures and ∼25 for exceptional cases) by choosing appropriate etching conditions.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/f48d12b984cde21be9c614c06ec6ac4a9fff5459

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

  1. Marko Loncar
  2. P. Hemmer
  3. Dirk Englund

In Materials Chemistry

  1. Dirk Englund

Citations in the corpus