Magnetoresistance and efficiency measurements of Alq 3 -based OLEDs

By P. Desai, P. Shakya, T. Kreouzis, W. Gillin, N. Morley, M. Gibbs. 2007

258 citations recorded by the source corpus.

Magnetoresistance and efficiency measurements of indium tin oxide/$N,{N}^{\ensuremath{'}}$-diphenyl-$N,{N}^{\ensuremath{'}}$ bis(3-methylphenyl)-($1,{1}^{\ensuremath{'}}$-biphenyl)-$4,{4}^{\ensuremath{'}}$ diamine/aluminum tris(8-hydroxyquinoline)/cathode organic light-emitting diode structures have been made as a function of magnetic field and cathode type. It has been found that magnetoresistance occurs only when there is light emission from the devices, which suggests that the magnetoresistance is related to exciton formation. Comparison of the effects of applied field on device efficiency and magnetoresistance shows that the magnetoresistance cannot be due to the recombination current. We suggest that the effect may be due to trapping of charge carriers at triplet excitons within the device.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/f46d4c0ee314910256f3e5d072b1e2bfc8a2a39d