First-principles theory of dilute magnetic semiconductors

By Kazunori Sato, L. Bergqvist, J. Kudrnovský, P. Dederichs, O. Eriksson, I. Turek, B. Sanyal, G. Bouzerar, H. Katayama‐Yoshida, V. Dinh and 3 more. 2010

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Spin-dependent phenomena and device concepts explored in (Ga,Mn)As (2013, background): “…detailed discussions of the materials aspects of the research of (Ga,Mn)As in the context of the family of (III,Mn)V and other magnetic materials we refer to other comprehensive review articles (Dietl, 2003; Dietl and Ohno, 2013; Jungwirth et al., 2006b; Matsukura et al., 2002; Sato et al., 2010).”
A ten-year perspective on dilute magnetic semiconductors and oxides. (2010, background): “First, in a long series of ab initio works a ferromagnetic ground state has been found for dilute transition-metal spins even in the absence of band carrier”
Dilute ferromagnetic semiconductors: Physics and spintronic structures (2013, methodology): “A deviation of EI from values expected for effective mass acceptors, known as a central cell correction or a chemical shift, was interpreted (Dietl, 2008a; Dietl et al., 2002; Mahadevan and Zunger, 2004; Sato et al., 2010) in terms of the hybridization-induced repulsion between t2 states originating”
VASPKIT: A user-friendly interface facilitating high-throughput computing and analysis using VASP code (2019, background): “It is not only used to understand the observed behavior of solids, including the structural, mechanical, electronic, magnetic and optical properties, but increasingly more to predict characteristics of compounds that have not yet been determined experimentally [6, 7, 8, 9, 10, 11, 12].”