On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt

By W. Guan, Ming Liu, Shibing Long, Qi Liu, Wen Wang. 2008

192 citations recorded by the source corpus.

Subfields: Cellular and Molecular Neuroscience, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/f40f3871b8c210f6d31b01ca776cd77e17aa8c6a

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In Electrical and Electronic Engineering

1. Shibing Long

Citations in the corpus

• State of the art of metal oxide memristor devices (2016, background): “Cu/Ta2O5/Pt and Cu/Cu-doped-ZrO2/Pt) suggest an assistant thermal-diffusion path of metallic species that contributes to the Reset event [37, 38].”
• Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications (2010, background): “In our previous study [5], we demonstrated that Cu-doped ZrO2 could significantly improve the resistance ratio and avoid the forming process, where ZrO2 is regarded as solid electrolyte [5], [7].”