Structure of GaN(0001): The laterally contracted Ga bilayer model

By J. Northrup, Jörg Neugebauer, R. Feenstra, A. Smith. 2000

297 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/f3fdf78d14580db5ef470643e7960e95f727213a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Kai Nordlund
2. K. Albe
3. Paul Erhart
4. J. Nord

In Electrical and Electronic Engineering

1. Paul Erhart
2. Kai Nordlund
3. K. Albe
4. J. Nord
5. Saurav Goel

In Materials Chemistry

1. Paul Erhart
2. K. Albe
3. Kai Nordlund
4. Alexander Stukowski
5. Saurav Goel
6. A. Krasheninnikov

Citations in the corpus

• Modelling of compound semiconductors: analytical bond-order potential for gallium, nitrogen and gallium nitride (2003, background): “Structural properties of the pure constituents like the N 2 molecule or the – Ga structure, however, are not considered in all previous studies and therefore simulations of surfaces (Northrup et al. 2000), defect clusters, growth or melting behavior are not possible.”