Strain engineering of the silicon-vacancy center in diamond

By S. Meesala, Young-Ik Sohn, B. Pingault, Linbo Shao, H. Atikian, Jeffrey Holzgrafe, Mustafa Gundogan, C. Stavrakas, Alp Sipahigil, Cleaven Chia and 9 more. Physical review B, 2018

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We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multiqubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. We identify regimes where the spin-orbit interaction results in a large strain susceptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/f3bc9998367706c91b7efa842d5b4a4624d10f32