High-mobility field-effect transistors based on transition metal dichalcogenides

By V. Podzorov, Michael Gershenson, Christian Kloc, R. Zeis, E. Bucher. 2004

552 citations recorded by the source corpus.

We report on fabrication of field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm2/V s for the p-type conductivity in the WSe2-based FETs at room temperature). These FETs demonstrate ambipolar operation. Owing to mechanical flexibility, they hold potential for applications in “flexible” electronics.

Subfields: Biomedical Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/f39ee1bbafb0df52971cdc211ee0731419d57370

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In Biomedical Engineering

1. C. Daniel Frisbie
2. T. Marks
3. Mark C. Hersam
4. Lincoln J. Lauhon
5. A. N. Enyashin
6. M. Di Ventra
7. J. Triscone

In Materials Chemistry

1. Mark C. Hersam
2. A. N. Enyashin
3. Vinod K. Sangwan
4. T. Marks
5. Deep Jariwala
6. Junsaku Nitta
7. S. Frolov
8. A. Morpurgo

Citations in the corpus

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