ZVS of Power MOSFETs Revisited

By M. Kasper, R. Burkart, G. Deboy, J. W. Kolar. IEEE transactions on power electronics, 2016

372 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/f364044a5fbcfeeb7a15eb53f0722e954cf94502

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In Electrical and Electronic Engineering

1. Daniel Christen
2. Jürgen Biela

Citations in the corpus

• Analytical Switching Loss Modeling Based on Datasheet Parameters for mosfets in a Half-Bridge (2019, background): “Turning S2 on before the recharging process ends results in a partial hard turn-on as described in [20].”
• COSS Losses in 600 V GaN Power Semiconductors in Soft-Switched, High- and Very-High-Frequency Power Converters (2018, background): “For example, [16] mentions that wide-bandgap devices dissipate roughly 10% of the stored energy in COSS , but subsequently proceed to ignore this in the tested Silicon Carbide (SiC) device and do not provide results for specific devices.”