Crystal growth and magnetic structure of MnBi2Te4

By Jiaqiang Yan, Q. Zhang, T. Heitmann, Zengle Huang, K. Y. Chen, J. Cheng, Weida Wu, D. Vaknin, B. Sales, R. McQueeney. PHYSICAL REVIEW MATERIALS, 2019

202 citations recorded by the source corpus.

Millimeter-sized MnBi$_2$Te$_4$ single crystals are grown out of Bi-Te flux and characterized by measuring magnetic and transport properties, scanning tunneling microscope (STM) and spectroscopy (STS). The magnetic structure of MnBi$_2$Te$_4$ below T$_N$ is determined by powder and single crystal neutron diffraction measurements. Below T$_N$=24\,K, Mn$^{2+}$ moments order ferromagnetically in the \textit{ab} plane but antiferromagnetically along the crystallographic \textit{c} axis. The ordered moment is 4.04(13) $\mu_{B}$/Mn at 10\,K and aligned along the crystallographic \textit{c}-axis. The electrical resistivity drops upon cooling across T$_N$ or when going across the metamagnetic transition in increasing fields below T$_N$. A critical scattering effect was observed in the vicinity of T$_N$ in the temperature dependence of thermal conductivity. However, A linear temperature dependence was observed for thermopower in the temperature range 2K-300K without any anomaly around T$_N$. These indicate that the magnetic order in Mn-Te layer has negligible effect on the electronic band structure, which makes possible the realization of proposed topological properties in MnBi$_2$Te$_4$ after fine tuning of the electronic band structure.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/f3012e1383d100f73ba359a7c3846030441ea3a4

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. H. Ding
2. T. Qian
3. H. Weng

In Materials Chemistry

1. H. Ding
2. T. Qian
3. H. Weng
4. Yuanfeng Xu

Citations in the corpus

• Dirac Surface States in Intrinsic Magnetic Topological Insulators EuSn2As2 and MnBi2nTe3n+1 (2019, background): “Theory has predicted several intrinsic antiferromagnetic (AF) TIs, such as MnBi2Te4 [16,19-21,33,40] and EuIn2As2 [17], while most experimental studies focused on MnBi2Te4 [18,21,25-27,30-39].”
• Gapless Surface Dirac Cone in Antiferromagnetic Topological Insulator MnBi2Te4 (2019, background): “with the magnetization along the c axis [23], which supports a massive surface Dirac cone if the bulk magnetic”