Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 /spl Aring/

By Y.H. Wu, M.Y. Yang, A. Chin, W. Chen, C. Kwei. IEEE Electron Device Letters, 2000

200 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/f2eccc95fcffc43b7d3f0b6bd0f43a1c3b51da94