High performance continuous wave 1.3 μm quantum dot lasers on silicon
By Alan Y. Liu, Chong Zhang, Justin C. Norman, A. Snyder, D. Lubyshev, J. Fastenau, A. Liu, Arthur C. Gossard, John E. Bowers. 2014
326 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/f22bf4c8745d7ec2688095fde09d218823bcfda4
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- Highly Reliable Low-Threshold InAs Quantum Dot Lasers on On-Axis (001) Si with 87% Injection Efficiency (2018, unknown): “&net ! ' "int ( "m ) ln * + * + , (2) 121”
- Silicon photonic integration in telecommunications (2015, methodology): “On the far left is monolithic integration, including using epitaxially grown Ge as an optical gain material [24], Er-doped glass waveguides, such as Al2O3, (which require optical pumping) [25], and epitaxially grown GaAs quantum dots [26].”