Controlling the Electronic Structure of Bilayer Graphene

By T. Ohta, A. Bostwick, T. Seyller, K. Horn, Eli Rotenberg. Science, 2006

2,916 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/f2297fb413d9d2a04b1e7ee209d9b2d1d98435b3

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In Atomic and Molecular Physics, and Optics

In Materials Chemistry

Citations in the corpus

Synthesis of Graphene and Its Applications: A Review (2010, neutral): “124 , 125 , 126 However, these gaps have been observed to be less than 400 meV and lead to significant tunneling between bands.”
Substrate-induced bandgap opening in epitaxial graphene. (2007, background): “A gap in bilayer graphene has been reported and attributed to the different potentials in the two graphene layers induced by doping or electric field [13, 14, 24].”
The structure of suspended graphene sheets (2007, neutral): “04 Monolayer [0–110] Bilayer [0–110] About 50 layers 0.”
Epitaxially grown graphene based gas sensors for ultra sensitive NO2 detection (2011, background): “Whilst the first layer of carbon in epitaxially grown graphene on SiC has no graphitic electronic properties and acts as a buffer layer, the subsequent graphene layers are n-type due to charge transfer from the SiC substrate to the graphene layers [8], this charge transfer introduces a band gap [9, ”
Graphene NanoPlatelets reinforced tantalum carbide consolidated by spark plasma sintering (2013, background): “Of particular interest is the growth of graphene on SiC wafers by decomposing SiC so that Si atoms sublimate and the remaining carbon atoms become activated by the high temperature (1300 ̊C) employed and undergo graphitization [74, 75].”
High-throughput solution processing of large-scale graphene. (2009, background): “Alternatively, the reduction of silicon carbide can be used to produce very small domains of single-layer samples; however, temperatures >1,100 ° C are needed and producing large domains remains a challeng”